Theoretical models of hydrogen-induced defects in amorphous silicon dioxide
نویسندگان
چکیده
Al-Moatasem El-Sayed,1,* Yannick Wimmer,2,† Wolfgang Goes,2,‡ Tibor Grasser,2,§ Valery V. Afanas’ev,3,‖ and Alexander L. Shluger1,¶ 1Department of Physics and Astronomy and London Centre for Nanotechnology, University College London, Gower Street, London, WC1E 6BT, United Kingdom 2Institute for Microelectronics, Technische Universität Wien, A-1040 Vienna, Austria 3Department of Physics, University of Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium (Received 2 April 2015; revised manuscript received 5 June 2015; published 10 July 2015)
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تاریخ انتشار 2015